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Design of A D-band Transformer-Based Neutralized Class-AB Power Ampli?er in Silicon Technologies Host Publication: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS) Authors: X. Tang, A. Medra, J. Nguyen, K. Khalaf, B. Debaillie and P. Wambacq Publisher: IEEE Publication Date: Jun. 2019 Number of Pages: 4 ISBN: 978-1-7281-1032-5
Abstract: High-speed wireless communication in the postLJG era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a D-band transformer-based Class-AB power ampli?er with cross-coupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain Gmax , saturation power Psat , drain ef?ciency DE and power added ef?ciency PAE after properly sizing the transistors to reach an optimum load resistance Ropt . Further, a 140 GHz 4-stage power ampli?er is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.
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