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Current assisted avalanche photo diodes (CAAPDs) with separate absorption and multiplication region in conventional CMOS This publication appears in: Applied Physics Letters Authors: G. Jegannathan, H. Ingelberts, S. Boulanger and M. Kuijk Publication Date: Sep. 2019
Abstract: A current assisted avalanche photodetector (CAAPD) is presented with a large detection window of 40?×?40 µm2, having a small 1-fF avalanche diode in its center. To quickly guide the photogenerated electrons to the center for avalanche multiplication, a drift field with associated majority hole current is applied across the neutral detection volume. This first type of CAAPD is fabricated in a conventional 350-nm CMOS process on a high resistive p- epi-layer. The low diode-junction capacitance can be of interest to integrated receivers. The CAAPD is characterized for its basic functionality, including the effects of lateral detection delay and gain.
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