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Semiconductor Technologies for next Generation Mobile Communications Host Publication: 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 Authors: N. Collaert, A. Alian, V. Deshpande, M. Ingels, V. Putcha, A. Sibaja-Hernandez, B. Van Liempd, A. Vais, A. Vandooren, A. Walke, D. Linten, B. Parvais, P. Wambacq and N. Waldron Publisher: Institute of Electrical and Electronics Engineers Inc Publication Date: Dec. 2018
Abstract: In this work, we will address the opportunities and technology challenges related to next generation mobile communication. To enable the required data rates and reliability for 5G applications, Si CMOS will need to be complemented with new materials and device architectures like III-V or GaN devices to enable at the same time the targeted speed and power efficiency of these systems. Heterogeneous integration, either monolithic or using 3D integration, will be a key enabler to achieve this.
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