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Characterization and Modeling of Hot Carrier Degradation in N-Channel Gate-All-Around Nanowire FETs This publication appears in: IEEE Transactions on Electron Devices Authors: C. Gupta, A. Gupta, S. Tuli, E. Bury, B. Parvais and A. Dixit Volume: 67 Issue: 1 Pages: 4-10 Publication Date: Jan. 2020
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