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Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs This publication appears in: IEEE Transactions on Electron Devices Authors: R. Yasser Gomaa Mohamed Elkashlan, R. Rodriguez, S. Yadav, A. Khaled, U. Peralagu, A. Alian, N. Waldron, M. Zhao, P. Wambacq, B. Parvais and N. Collaert Volume: 67 Issue: 11 Pages: 4592-4596 Publication Date: Sep. 2020
Abstract: To enable CMOS-compatible GaN HEMTs for the next generation of communication systems (5G and beyond), a low gate resistance is of great importance since it directly affects the RF power gain and fMAX of the transistor. In this article, the impact of various gate-metal stacks on the gate resistance and RF performance of the devices is studied. The optimized Ti-free gate-metal process leads to fMAX enhancement up to ~50% for devices scaled down to 0.32-µm gate lengths. The gate resistance for the T-shaped gate is modeled from the S-parameters and validated on various gate field plate geometries. The tradeoff between the gate resistance and the parasitic capacitance in GaN HEMTs is highlighted in this case.
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