|
|
A. Vais, R. Alcotte, M. Ingels, P. Wambacq, B. Parvais, R. Langer, B. Kunert, N. Waldron, N. Collaert, Y. Mols, A. S. Hernandez, A. Walke, M. Baryshnikova, G. Mannaert and V. Deshpande, “First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering,” in 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, Institute of Electrical and Electronics Engineers Inc, Dec. 2019.
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