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Transient Effects in Optically Modulated Transmission Line Switches Opertaing at Millimeter Wave Frequencies Host Publication: 4th ESA Workshop on Millimetre Wave Technology and Applications, The 8th Topical Symposium on Millimeter Waves - TSMMW2006 , The 7th MINT Millimeter-Wave International Symposium - MINT-MIS2006 Authors: G. Poesen, M. Vanden Bossche, G. Koers, J. Stiens and R. Vounckx Publication Date: Feb. 2006
Abstract: Transient effects of optically modulated RF-switches, measured with a large-signal vector network analyzer (LSNA) are discussed in
this paper. Light is used to influence the characteristics of a coplanar waveguide (CPW) designed in a multilayer thin-film multichip
module (MCM-D) technology on high resistivity Silicon (HR-Si). Under static illumination of the CPW line, measurements
demonstrate an insertion loss contrast of more than 35 dB above 20 GHz. With a modulated illumination input in the kHz-range, the
study of the insertion and return loss show transient effects depending on the carrier frequency and substrate parameters. Time
dependent S-parameters are used to study the switch behavior of the CPW line under illumination. The static physical model, used in
3D-electromagnetic (EM) simulations, is used to explain the time dependent behavior. External Link.
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