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High-efficiency thin-film light-emitting diodes at 650 nm This publication appears in: Electronics Letters Authors: C. Rooman, R. Windisch, M. De Hondt, P. Modak, I. Moerman, P. Mijlemans, B. Dutta, G. Borghs, R. Vounckx, M. Kuijk and P. Heremans Volume: 37 Issue: 13 Pages: 852-853 Publication Date: Jun. 2001
Abstract: The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA
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