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Reliability aspects of thermal micro-structures implemented on industrial 0.8 µm CMOS chips This publication appears in: Microelectronics Reliability Authors: L. Sheng, C. De Tandt, W. Ranson and R. Vounckx Volume: 41 Issue: 2 Pages: 307-315 Publication Year: 2001
Abstract: This paper discusses the reliability characterization of thermal micro-structures implemented on industrial 0.8 µm CMOS chips. Various degradation and failure mechanisms are identified and evaluated under high temperature operation. At high temperatures the mechanisms are many and varied, and co-incidental thermally-induced mechanical defects are found in both the poly-Si heater and the poly-Si temperature sensor, along with temperature- and current-enhanced interlayer diffusion degradation of the heater contacts. Local reduction in the device thermal capacity by using silicon micro-machining can be expected to hold the promise of a number of significant advantages, especially for limiting current stressing of the contact regions. The results can be used to optimize the design of thermally based micro-sensors on CMOS chips, such as CMOS compatible chemoresistive gas sensors.
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