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Effect of mixing enthalpy on relaxed and strained growth of III-(VyV1-yII)-V-I compound alloys using molecular-beam epitaxy This publication appears in: Journal of Applied Physics Authors: J. Genoe, J. G. Németh, B. Grietens, M. Behet, R. Vounckx and G. Borghs Volume: 87 Issue: 1 Pages: 564-571 Publication Year: 2000
Abstract: The strict virtual crystal model has been shown to describe accurately the mixing enthalpy of III-V ternary alloys. We allocate the different components of this model to both subreactions, i.e., the reactions forming III-V-I and III-V-II, present in the molecular-beam epitaxial growth of III-(VVII)-V-I compound alloys, and derive thereof a model that describes accurately the composition obtained. A good correspondence with experimental growth data is obtained. We apply this model to both relaxed and strained layer growth and the evolution in the composition is given when a relaxed layer is grown on a substrate with a different lattice constant.
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