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A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digital CMOS This publication appears in: IEEE JOURNAL OF SOLID-STATE CIRCUITS Authors: J. Borremans, A. Bevilacqua, S. Bronckers, M. Dehan, M. Kuijk, P. Wambacq and J. Craninckx Volume: 43 Issue: 12 Pages: 2693-2705 Publication Date: Dec. 2008
Abstract: As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wideband front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is realized using a single-inductor dual-band 3.5 and ᆞ GHz VCO. In-depth analysis describes the operation of the 4-port oscillator, and compares phase noise to that of a classical VCO. The front-end is realized in 90 run digital CMOS. The LNA achieves a noise figure of 2.7 dB with an average IIP3 of DŽ dBm. The dual-band VCO achieves a phase noise of 끂 dBc/Hz and 끈 dBc/Hz at 3.9 GHz and 10 GHz, respectively, at 2.5 MHz offset. Both circuits are embedded in a wideband direct-conversion front-end consuming less than 60 mW from a 1.2 V supply
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