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A 400 µ W, 4.7-6.4 GHz VCO under an above-IC inductor in 45 nm CMOS Host Publication: Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet Authors: J. Borremans, G. Carchon, P. Wambacq, M. Kuijk, P. Muller, P. Soussan and S. Decoutere Publisher: IEEE Publication Date: May. 2008 Number of Pages: 5 ISBN: 978-1-4244-2230-2
Abstract: A 4.7-toLj.4 GHz VCO is designed in 45 nm bulk CMOS using an above-IC inductor on top of the active circuitry, yielding 28% area reduction. The inductor is shielded from the circuitry, using the top metal layers of the CMOS back- end, which enables the proposed 3D integration for low-cost performance extension. The fully integrated VCO consumes just 400 microW, achieves a FoM of 185 dB, and occupies and area of only 0.12 mm2
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