|
A 400uW, 4.7-6.4GHz 45nm CMOS VCO with active area underneath its Above-IC Inductor Host Publication: 2008 IEEE 58th Electronic Components and Technology Conference Authors: J. Borremans, G. Carchon, P. Wambacq, M. Kuijk and S. Decoutere Publisher: IEEE Publication Date: May. 2008 Number of Pages: 5 ISBN: 978-1-4244-2230-2
Abstract: A 4.7-toLj.4GHz VCO is designed in 45nm bulk CMOS using an Above-IC inductor on top of the active circuitry, yielding 28% area reduction. The inductor is shielded from the circuitry, using the top metal layers of the CMOS back-end, which enables the proposed 3D integration for low-cost performance extension. The fully integrated VCO consumes just 400uW, achieves a FoM of 185dB, and occupies and area of only 0.12mm2.
|
