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Ohmic contact formation on n-type Ge This publication appears in: Applied Physics Letters Authors: R. Lieten, S. Degroote, M. Kuijk and G. Borghs Volume: 92 Pages: 22106 Publication Date: Jan. 2008
Abstract: Severe Fermi level pinning at the interface between n-Ge and a metal leads to the formation of a Schottky barrier, almost independent on the metal work function. Therefore, it seems impossible to form metal Ohmic contacts on moderately, n-type doped Ge layers. For p-type Ge, the Fermi level pinning works opposite: all metal contacts show Ohmic behavior. This fixed behavior can be altered by the introduction of a thin Ge3N4 layer. Ge3N4 seems effective in reducing Fermi level pinning and, therefore, allows the formation of Ohmic contacts on n-type Ge and a rectifying contact on p-type Ge. (c) 2008 American Institute of Physics
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