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A 1 * 64 complementary metal oxide semiconductor ranging sensor based on current-assisted photonic demodulators This publication appears in: International Journal of Intelligent Systems Technologies and Applications Authors: W. van der Tempel, D. Van Nieuwenhove, R. Grootjans and M. Kuijk Volume: 5 Issue: 3-4 Pages: 237-245 Publication Date: Jan. 2008
Abstract: A new complementary metal oxide semiconductor (CMOS) active pixel-ranging sensor is presented, realised as a 1 * 64 array of 30 microns * 30 microns lock-in pixels. The sensor is based on the Current-Assisted Photonic Demodulator (CAPD), implemented in a Standard CMOS 0.35 ? m technology. The ranging pixel achieves 75% Fill-Factor, 0.22 A Wǃ total QE and a demodulation bandwidth up to 70 MHz, both at 860 nm light. Range-finding is achieved through Modulated Wave Time-Of-Flight (TOF) measurements with a modulation frequency of 20 MHz. Distance measurements are presented. This sensor represents the first step towards integrating CAPD-based lock-in pixels in large TOF CMOS ranging systems
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