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A 5 kV HBM transformer-based ESD protected 5-6 GHz LNA Host Publication: Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet Authors: J. Borremans, S. Thijs, P. Wambacq, D. Linten, Y. Rolain and M. Kuijk Publication Date: Jun. 2007 Number of Pages: 2
Abstract: Integrated designs in deep-submicron CMOS require ESD protection for their I/O pins. Since CMOS scaling drastically lowers the breakdown voltage of a MOS transistor, the available design window for ESD protection is narrowing. An inductor-based ESD protection offers superb protection but is severely area consuming. In this paper we propose a transformer-based ESD protection for inductor-based LNAs. We demonstrate that the proposed technique offers excellent ESD protection and RF performance without the loss of area.
Keywords: LNA, ESD protection, transformer, low area, CMOS.
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