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Growth of GaN on Ge(111) by molecular beam Epitaxy This publication appears in: Applied Physics Letters Authors: R. Lieten, D. Stefan, K. Cheng, M. Leys, M. Kuijk and G. Borghs Volume: 89 Pages: 1-3 Publication Date: Dec. 2006
Abstract: The epitaxial growth of GaN on Ge is reported. The authors found that direct growth of GaN
performs exceptionally well on Ge(111) with plasma assisted molecular beam epitaxy. A streaky
reflection high energy electron diffraction pattern is observed during growth. X-ray diffraction
showed a rocking curve full width at half maximum of only 371 arc sec for a 38 nm GaN layer and
indicates an abrupt interface between the GaN and Ge. Secondary ion mass spectrometry shows
limited diffusion of Ga atoms into the Ge substrate and Ge atoms into the GaN layers.
Current-voltage measurements show rectifying behavior for n-GaN on p-Ge. Their results indicate
that GaN growth on Ge does not require intermediate layers, allowing the Ge substrate to be used
as back contact in vertical devices. A p-n junction formed between GaN and Ge can be used in
heterojunction devices.
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