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An Electrical-Balance Duplexer for In-Band Full-Duplex with <-85dBm In-Band Distortion at +10dBm TX-power Host Publication: European Solid-State Circuits Conference Authors: B. Van Liempd, B. Hershberg, B. Debaillie, P. Wambacq and J. Craninckx Publisher: IEEE Publication Date: Sep. 2015 Number of Pages: 4 ISBN: 978-1-4673-7470-5
Abstract: When using electrical-balance duplexers (EBDs) to provide RF self interference cancellation for in band full duplex, in-band distortion produced by nonlinear CMOS switches in the duplexer cause distortion that limits the headroom for additional self interference cancellation in subsequent cancellation schemes in the transceiver. A prototype EBD is fabricated in 0.18µm SOI CMOS to investigate the dynamic range limitations of a transceiver architecture for next generation wireless systems that supports in band full duplex and legacy FDD. Measurements show ᇩdBm in band distortion at +10dBm TX input power, enough for short-range links at 10MHz BW.
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