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Comparative Study of a Fully Differential Op Amp in FinFET and Planar Technologies Host Publication: 10th Conference on PhD Research in Microelectronics and Electronics Authors: S. Morrison, B. Parvais, G. Vandersteen, K. Miyaguchi, A. Mercha and P. Wambacq Publisher: IEEE Publication Date: Jun. 2014 Number of Pages: 4 ISBN: 978-1-4799-4994-6
Abstract: In the race to deliver ever smaller and faster devices, bulk FinFETs are seen as a viable alternative to planar bulk technologies. With that in mind, a new benchmarking scheme is implemented in order to effectively and fairly compare, in simulation, a 10nm FinFET technology with a 28nm planar CMOS one on a 100 MHz gain-bandwidth operational amplifier. For identical phase margins, the 10nm design consumes 99 mu A compared to over 123 mu A in 28nm, yielding a substantial decrease in power consumption in favor of the FinFET-based design.
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