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A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C Host Publication: European Solid State Circuits Conference (ESSCIRC) Authors: A. Medra, V. Giannini, D. Guermandi and P. Wambacq Publisher: Institute of Electrical and Electronics Engineers ( IEEE ) Publication Year: 2014 Number of Pages: 4 ISBN: 978-1-4799-5694-4
Abstract: This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF < 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.
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