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60GHz Transmitter Front-End in 40nm LP-CMOS with Improved Back-Off Efficiency Host Publication: Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on Authors: K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long and P. Wambacq Publisher: IEEE Publication Date: Jan. 2013 Number of Pages: 3 ISBN: 978-1-4673-1552-4
Abstract: A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAMᆤ signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (PǃdB) are 22dB and 10.2dBm, respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of PǃdB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx. External Link.
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