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Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs Host Publication: Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet Authors: V. Subramanian, B. Parvais, J. Borremans, A. Mercha, D. Linten, P. Wambacq, J. Loo, M. Dehan, N. Collaert, S. Kubicek, R. J. P. Lander, J. Hooker, F. N. Cubaynes, S. Donnay, M. Jurczak, G. Groeseneken, W. Sansen and S. Decoutere Publication Date: Dec. 2006 Number of Pages: 4
Abstract: Comparison of digital and analog Figures-of-Merit of
FinFETs and planar bulk MOSFETs reveals an interesting
trade-off in analog/RF design space. It is seen that FinFETs
possess key advantages over bulk FETs for applications
around 5 GHz where the performance-power trade-off is
important. In case of higher frequency applications bulk
MOSFETs are shown to hold the advantage on account of
their higher transconductance (Gm), provided a degraded
voltage gain and a higher leakage current can be tolerated.
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