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Planar bulk MOSFETs versus FinFETs: an analog/RF perspective This publication appears in: IEEE Transactions on Electron Devices Authors: V. Subramanian, B. Parvais, J. Borremans, A. Mercha, D. Linten, P. Wambacq, J. Loo, M. Dehan, C. Gustin, N. Collaert, S. Kubicek, R. J. P. Lander, J. Hooker, F. N. Cubaynes, S. Donnay, M. Jurczak, G. Groeseneken, W. Sansen and S. Decoutere Volume: 53 Issue: 12 Pages: 3071-3079 Publication Date: Dec. 2006
Abstract: Comparison of digital and analog figures-of-merit of
FinFETs and planar bulk MOSFETs reveals an interesting tradeoff
in the analog/RF design space. It is found that FinFETs possess
the following key advantages over bulk MOSFETs: reduced leakage,
excellent subthreshold slope, and better voltage gain without
degradation of noise or linearity. This makes them attractive for
digital and low-frequency RF applications around 5 GHz, where
the performance-power tradeoff is important. On the other hand,
in high-frequency applications, planar bulk MOSFETs are seen
to hold the advantage over FinFETs due to their higher peak
transconductance. However, this comes at a cost of a reduced
voltage gain of bulk MOSFETs.
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