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@InProceedings{Pub_9853, author = {D. Yakimets, M. Garcia Bardon, D. Jang, P. Schuddinck, Y. Sherazi, P. Weckx, K. Miyaguchi, B. Parvais, P. Raghavan, A. Spessot, D. Verkest and A. Mocuta}, title={Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology}, booktitle = {63rd IEEE International Electron Devices Meeting, IEDM 2017}, publisher = {Institute of Electrical and Electronics Engineers Inc}, month={Jan}, year={2018} }
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