|
|
@InProceedings{Pub_10300, author = {B. Parvais, L. Peng, L. Teugels, E. Rosseel, A. Vandooren, J. Franco, A. Walke, V. Deshpande, N. Rassoul, G. Hellings, G. Jamieson, F. Inoue, E. Vecchio, T. Zheng, W. Vanherle, A. Hikavyy, G. Mannaert, B. T. Chan, R. Ritzenthaler, J. Mitard, L. Ragnarsson, N. Waldron, V. De Heyn, J. Boemmels, D. Mocuta and N. Collaert}, title={First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers}, booktitle = {64th Annual IEEE International Electron Devices Meeting, IEDM 2018}, publisher = {Institute of Electrical and Electronics Engineers Inc}, month={Jan}, year={2019} }
|
|
